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Excelics
PRELIMINARY DATA SHEET
* * * * * * * +28.0dBm TYPICAL OUTPUT POWER 9.5dB TYPICAL POWER GAIN AT 12GHz HIGH BVgd FOR 10V BIAS 0.3 X 1200 MICRON RECESSED "MUSHROOM" GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY Idss SORTED IN 20mA PER BIN RANGE
EFC120B
Low Distortion GaAs Power FET
550 50 156
D
D
48
350 100
40
S
G
S
G
S
95
50
120
ELECTRICAL CHARACTERISTICS (Ta = 25 C)
SYMBOLS P1dB G1dB PAE Idss Gm Vp BVgd BVgs Rth PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression f=12GHz Vds=10V, Ids=50% Idss f=18GHz Gain at 1dB Compression f=12GHz Vds=10V, Ids=50% Idss f=18GHz Power Added Efficiency at 1dB Compression Vds=10V, Ids=50% Idss f=12GHz Saturated Drain Current Transconductance Pinch-off Voltage Vds=3V, Vgs=0V Vds=3V, Vgs=0V Vds=3V, Ids=3.0 mA
O
Chip Thickness: 75 13 microns All Dimensions In Microns
MIN 26.0 7.5
TYP 28.0 28.0 9.5 7.0 33
MAX
UNIT dBm dB %
160 100
260 140 -2.5
360
mA mS
-4.0
V V V
o
Drain Breakdown Voltage Igd=1.2mA Source Breakdown Voltage Igs=1.2mA Thermal Resistance (Au-Sn Eutectic Attach)
-15 -10
-20 -17 40
C/W
MAXIMUM RATINGS AT 25OC SYMBOLS PARAMETERS ABSOLUTE1 CONTINUOUS2
Drain-Source Voltage 14V 10V Vds Gate-Source Voltage -8V -4.5V Vgs Drain Current Idss 285mA Ids Forward Gate Current 30mA 5mA Igsf Input Power 26dBm @ 3dB Compression Pin Channel Temperature 175oC 150oC Tch Storage Temperature -65/175oC -65/150oC Tstg Total Power Dissipation 3.4W 2.8W Pt Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054 Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
EFC120B
PRELIMINARY DATA SHEET
Low Distortion GaAs Power FET
S-PARAMETERS
10V, 1/2 Idss
Freq GHz 1.000 2.000 3.000 4.000 5.000 6.000 7.000 8.000 9.000 10.000 11.000 12.000 13.000 14.000 15.000 16.000 17.000 18.000 19.000 20.000 21.000 22.000 23.000 24.000 25.000 26.000
S11 Mag 0.970 0.928 0.899 0.884 0.876 0.868 0.871 0.866 0.868 0.871 0.874 0.878 0.878 0.884 0.885 0.890 0.890 0.895 0.898 0.905 0.911 0.912 0.922 0.919 0.923 0.930
S11 Ang -47.8 -83.3 -108.1 -125.3 -138.0 -147.5 -155.2 -161.2 -166.6 -171.5 -176.7 179.1 175.3 172.1 168.4 164.3 160.9 158.2 155.5 152.1 143.9 141.1 139.7 138.2 137.3 135.8
S21 Mag 6.538 5.302 4.250 3.482 2.884 2.462 2.141 1.889 1.681 1.516 1.380 1.263 1.159 1.074 0.992 0.926 0.862 0.807 0.754 0.703 0.647 0.595 0.549 0.505 0.460 0.442
S21 Ang 148.7 125.7 108.6 95.4 84.1 74.5 66.3 58.7 51.6 44.7 38.1 31.7 25.4 19.5 13.5 6.6 0.5 -5.3 -11.4 -17.3 -23.3 -28.0 -33.2 -36.9 -40.3 -44.3
S12 Mag 0.034 0.056 0.067 0.072 0.073 0.073 0.073 0.072 0.070 0.068 0.066 0.064 0.063 0.062 0.060 0.059 0.059 0.059 0.058 0.058 0.056 0.056 0.055 0.054 0.054 0.056
S12 Ang 62.7 44.8 31.7 22.4 15.7 11.0 6.4 3.1 0.3 -2.2 -4.5 -6.4 -8.0 -8.3 -9.9 -11.4 -13.3 -14.0 -14.0 -13.8 -14.3 -13.1 -13.0 -10.6 -6.3 -3.4
S22 Mag 0.293 0.284 0.281 0.290 0.296 0.323 0.354 0.384 0.415 0.445 0.475 0.507 0.532 0.561 0.581 0.599 0.621 0.644 0.662 0.676 0.699 0.713 0.748 0.765 0.787 0.799
S22 Ang -35.9 -63.5 -83.1 -95.4 -107.6 -114.8 -119.3 -123.7 -127.2 -130.5 -134.0 -137.2 -140.6 -144.4 -148.3 -152.8 -158.4 -163.6 -168.7 -173.6 -172.1 -177.2 178.7 176.4 173.6 171.0
Note: The data included 0.7 mils diameter Au bonding wires: 2 gate wires, 15 mils each; 2 drain wires, 20 mils each; 6 source wires, 7 mils each.

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